Product Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
