NEC | sku: 1056 J606_2SJ606 ; Transistor P-MOSFET 60V 83A 120W 12mΩ with-Protection, TO-220 2SJ606.pdf View Details Compare
Toshiba | sku: 4449-1 J20A10M ; Transistor P-MOSFET 100V 20A 35W 63mΩ, TO-220F TJ20A10M.pdf View Details Compare
Toshiba | sku: 4209 J334 ; Transistor P-MOSFET 60V 30A 45W 29mΩ with-Protections, TO-220F 2SJ334.pdf View Details Compare
IR | sku: 2567 IRF5305 ; Transistor P-MOSFET 55V 31A 110W 60mΩ, TO-220 IRF5305.pdf View Details Compare
xxx | sku: 2461-1 WSR45P10 ; Transistor P-MOSFET 100V 40A 136W 44mΩ Trench, TO-220 WSR45P10.pdf View Details Compare
Infineon | sku: 2438-1 80P06P ; Transistor P-MOSFET 60V 80A 340W 21mΩ, TO-220 80P06P.pdf View Details Compare
Fairchild | sku: 3953 FQP47P06 ; Transistor P-MOSFET 60V 47A 160W 21mΩ, TO-220 FQP47P06.pdf View Details Compare
xxx | sku: 3910 40P03 ; Transistor P-MOSFET 30V 40A 80W 14mΩ, TO-220 CMP40P03.pdf View Details Compare
Fairchild | sku: 2428 FQPF9P25 ; Transistor P-MOSFET 250V 6A 50W 0.48Ω, TO-220F FQPF9P25.pdf View Details Compare
Vishay | sku: 4294 IRF9Z34 ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-220 IRF9Z34.pdf View Details Compare
Vishay | sku: 4293 IRF9Z34S ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-263 IRF9Z34S.pdf View Details Compare
SEC | sku: 1472 SFP9640 ; Transistor P-MOSFET 200V 11A 123W 0.5Ω, TO-220 SFP9640.pdf - Avalanche Rugged Technology- Rugged Gate Oxide Technology- Lower Input Capacitance- Improved Gate Charge- Extended Safe Operating Area- Lower Leakage Current : -10 mA (Max.) @ VDS = -200V- Low RDS(ON) : 0.344 W (Typ.) View Details Compare
ON | sku: 1320 MTP10P10 ; Transistor P-MOSFET 100V 10A 75W 300mΩ, TO-220 MTP10P10.pdf View Details Compare
Hitachi | sku: 1639 J471 : 2SJ471 ; Transistor P-MOSFET 30V 30A 30W 25mΩ, TO-220F J471.pdf Silicon P Channel DV–L MOS FET , High Speed Power Switching. • Low on-resistance RDS(on) = 25 mΩ typ.• 4V gate drive devices.• High speed switching View Details Compare
Toshiba | sku: 1637(5055) J380 ; Transistor P-MOSFET 100V 12A 35W 0.15Ω, TO-220F 2SJ380.pdfRelay Drive, DC-DC Converter and Motor Drive Applications• 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage current: IDSS =... View Details Compare
NEC | sku: 1455 J330 : 2SJ330 ; Transistor P-MOSFET 60V 20A 35W 40mΩ, TO-220F J330.pdf View Details Compare
xxx | sku: 1636 J307 : 2SJ307 ; Transistor P-MOSFET 250V 6A 30W 0.75Ω, TO-220F J307.pdf · Low ON resistance.· Ultrahigh-speed switching.· Low-voltage drive.· Micaless package facilitating mounting. View Details Compare
xxx | sku: 1635 J175 : 2SJ175 ; Transistor P-MOSFET 60V 10A 25W 0.13Ω, TO-220F J175.pdf Silicon P-Channel MOS FET • Low on-resistance• High speed switching• Low drive current• 4 V gate drive device , Can be driven from 5 V source• Suitable for motor drive, DC-DC converter, power switch and solenoid drive View Details Compare
IXYS | sku: 1357 IXTP28P065T ; Transistor P-MOSFET 65V 28A 83W 45mΩ, TO-220 TP28P065T.pdf View Details Compare
IR | sku: 1292 IRFI9630G ; Transistor P-MOSFET 200V 4.3A 35W 0.8Ω, TO-220F IRFI9630G.pdf View Details Compare
IR | sku: 1290 IRF9640 ; Transistor P-MOSFET 200V 11A 125W 0.5Ω, TO-220 IRF9640.pdf View Details Compare
Vishay | sku: 1272(5086) IRF9630 ; Transistor P-MOSFET 200V 6.5A 74W 0.8Ω, TO-220 IRF9630.pdf • Dynamic dV/dt Rating• Repetitive Avalanche Rated• P-Channel• Fast Switching• Ease of Paralleling• Simple Drive Requirements View Details Compare
Fairchild | sku: 1270 IRF9610 ; Transistor P-MOSFET 200V 1.8A 20W 3Ω, TO-220 IRF9610.pdf View Details Compare
IR | sku: 1269 IRF9540N ; Transistor P-MOSFET 100V 23A 140W 117mΩ, TO-220 IRF9540.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1267 IRF9530N ; Transistor P-MOSFET 100V 14A 79W 0.20Ω, TO-220 IRF9530N.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1265 IRF5210 ; Transistor P-MOSFET 100V 40A 200W 60mΩ, TO-220 IRF5210.pdf - Advanced Process Technology- Ultra Low On-Resistance- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1266(5002-1) IRF4905 ; Transistor P-MOSFET 55V 74A 200W 20mΩ, TO-220 IRF4905.pdf View Details Compare
Fairchild | sku: 1370 FQP27P06 ; Transistor P-MOSFET 60V 27A 120W 55mΩ, TO-220 FQP27P06.pdf • - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A• Low Gate Charge (Typ. 33 nC)• Low Crss (Typ. 120 pF)• 100% Avalanche Tested• 175C Maximum Junction Temperature Rating View Details Compare