Product Description
Silicon P Channel MOS FET.
• Low on-resistance RDS(on) = 0.075Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
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Silicon P Channel MOS FET.
• Low on-resistance RDS(on) = 0.075Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.