Product Description
Silicon P Channel DV–L MOS FET , High Speed Power Switching.
• Low on-resistance RDS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching
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Silicon P Channel DV–L MOS FET , High Speed Power Switching.
• Low on-resistance RDS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching