Toshiba | sku: 1637(5055) J380 ; Transistor P-MOSFET 100V 12A 35W 0.15Ω-with-Protections, TO-220F Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ-Trench-with-Protections, SO-8 Compare
ALPHA_OMEGA | sku: 4256 4425_AO4425 ; Transistor P-MOSFET 38V 14A 3.1W 7.7mΩ-with-Protections, SO-8 Compare
ST | sku: 4719-1 VNB35N07 ; Transistor N-MOSFET 70V 35A 125W 28mΩ-with-Protections-OMNIFET, TO-263 Compare
ALPHA_OMEGA | sku: 1446 4407A ; Transistor P-MOSFET 30V 12A 3.1W 8.5mΩ-Trench, SO-8 4407A : AO4407A.pdf The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. View Details Compare
Fairchild | sku: 1959 2N3820 ; Transistor P-JFET 20V 15mA 360mW Ω, TO-92 P-Channel General Purpose Amplifier 2N3820.pdf View Details Compare
NEC | sku: 1929 J601_2SJ601 ; Transistor P-MOSFET 60V 36A 65W 25mΩ, TO-251 J601.pdf The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18... View Details Compare
Toshiba | sku: 1638 J412_2SJ412 ; Transistor P-MOSFET 100V 16A 60W 15mΩ, TO-263 J412.pdf TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) • 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage... View Details Compare
Toshiba | sku: 1637(5055) J380 ; Transistor P-MOSFET 100V 12A 35W 0.15Ω-with-Protections, TO-220F 2SJ380.pdfRelay Drive, DC-DC Converter and Motor Drive Applications• 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage current: IDSS =... View Details Compare
--- | sku: 1636 J307_2SJ307 ; Transistor P-MOSFET 250V 6A 30W 0.75Ω, TO-220F J307.pdf · Low ON resistance.· Ultrahigh-speed switching.· Low-voltage drive.· Micaless package facilitating mounting. View Details Compare
--- | sku: 3730 A1SHB ; Transistor P-MOSFET 20V 2.2A 0.6W 110mΩ, SOT-23 A1SHB.pdf View Details Compare
--- | sku: 2683 B20P03 ; Transistor P-MOSFET 30V 18A 2.5W 17.5mΩ-Logic-Level, SO-8 B20P03.pdf Pâ€Channel Logic Level Enhancement Mode Field Effect Transistor View Details Compare
Vishay | sku: 3729 Si4835DDY ; Transistor P-MOSFET 30V 13A 5.6W 14mΩ, SO-8 Si4835DDY.pdf View Details Compare
--- | sku: 3825-1 Si9435BDY ; Transistor P-MOSFET 30V 4.1A 1.3W 33mΩ, SO-8 Si9435BDY.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
--- | sku: 3458 Si4947A ; Dual-Transistor P-MOSFET 30V 3A 1.2W 62mΩ, SO-8 Si4947.pdf Dual P-Channel 30-V (D-S) MOSFET View Details Compare
--- | sku: 3429 9565BGH_AP9565BGH ; Transistor P-MOSFET 40V 17A 25W 52mΩ, TO-252 9565BGH.pdf â–¼ Lower Gate Chargeâ–¼ Simple Drive Requirementâ–¼ Fast Switching Characteristic View Details Compare
Vishay | sku: 4294 IRF9Z34 ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-220 IRF9Z34.pdf View Details Compare
Vishay | sku: 4293 IRF9Z34S ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-263 IRF9Z34S.pdf View Details Compare
Vishay | sku: 4292 IRF9Z24 ; Transistor P-MOSFET 60V 11A 60W 0.28Ω, TO-220 IRF9Z24.pdf View Details Compare
ALPHA_OMEGA | sku: 4289 D413A_AOD413A ; Transistor P-MOSFET 40V 12A 50W 36mΩ-Trench, TO-252 D413A.pdf View Details Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ-Trench-with-Protections, SO-8 4447A : AO4447A.pdf The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. View Details Compare
ALPHA_OMEGA | sku: 4258 4485 ; Transistor P-MOSFET 40V 10A 3.1W 12.5mΩ-Trench, SO-8 4485 : AO4485.pdf The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. View Details Compare
ALPHA_OMEGA | sku: 4256 4425_AO4425 ; Transistor P-MOSFET 38V 14A 3.1W 7.7mΩ-with-Protections, SO-8 4425_AO4425.pdf View Details Compare
Hitachi | sku: 1639 J471_2SJ471 ; Transistor P-MOSFET 30V 30A 30W 25mΩ, TO-220F J471.pdf Silicon P Channel DV–L MOS FET , High Speed Power Switching. • Low on-resistance RDS(on) = 25 mΩ typ.• 4V gate drive devices.• High speed switching View Details Compare
--- | sku: 4074 IRFR9014P ; Transistor P-MOSFET 60V 5.1A 25W 0.5Ω, TO-252 IRFR9014P.pdf • Dynamic dV/dt rating• Repetitive avalanche rated• Surface mount (IRFR9014, SiHFR9014)• Straight lead (IRFU9014, SiHFU9014)• Available in tape and reel• P-channel• Fast switching View Details Compare
--- | sku: 1283 IRFP9240 ; Transistor P-MOSFET 200V 12A 150W 0.5Ω, TO-247 IRFP9240.pdf View Details Compare
IR | sku: 1290 IRF9640 ; Transistor P-MOSFET 200V 11A 125W 0.5Ω, TO-220 IRF9640.pdf IRF9640.pdf View Details Compare
Fairchild | sku: 1270 IRF9610 ; Transistor P-MOSFET 200V 1.8A 20W 3Ω, TO-220 IRF9610.pdf View Details Compare
IR | sku: 1269 IRF9540N ; Transistor P-MOSFET 100V 23A 140W 117mΩ, TO-220 IRF9540.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1267 IRF9530N ; Transistor P-MOSFET 100V 14A 79W 0.20Ω, TO-220 IRF9530N.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1265 IRF5210 ; Transistor P-MOSFET 100V 40A 200W 60mΩ, TO-220 IRF5210.pdf - Advanced Process Technology- Ultra Low On-Resistance- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1266(5002-1) IRF4905 ; Transistor P-MOSFET 55V 74A 200W 20mΩ, TO-220 IRF4905.pdf View Details Compare
--- | sku: 1456 BS250 ; Transistor P-MOSFET 45V 0.18A 0.83W 8Ω, TO-92 BS250.pdf P-Channel 60-V (D-S) MOSFET View Details Compare
--- | sku: 1179 B3942 ; Dual-Transistor N+P-MOSFET 30V 6.1A(6.9A) 2W 35mΩ(25mΩ)-Logic, SO-8 B3942.pdf View Details Compare
--- | sku: 3656 4AJ11 ; Quad-Transistor P-MOSFET 60V 8A 28W 90mΩ-Array-Driver, SP-12 4AJ11.pdf • Low on-resistance RDS(on) 0.13 , VGS = –10 V, ID = –4 A RDS(on) 0.17 , VGS = –4 V, I D = –4 A• Capable of 4 V gate drive• Low drive current• High speed switching• High... View Details Compare
--- | sku: 3671 4953P_AF4953P ; Dual-Transistor P-MOSFET 30V 5.2A 2.1W 40mΩ, SO-8 4953P.pdf - Low rDS(on) Provides Higher Efficiency and Extends Battery Life- Miniature SO-8 Surface Mount Package Saves Board Space- High power and current handling capability- Extended VGS range (±25) for battery pack applications View Details Compare
--- | sku: 4360 4501GM ; Dual-Transistor N+P-MOSFET 30V 7A(5.3A) 2W 28mΩ(50mΩ), SO-8 4501.pdf -Simple Drive Requirement-Low On-resistance -Fast Switching Performance View Details Compare
--- | sku: 1460 J377_2SJ377 ; Transistor P-MOSFET 60V 5A 20W 0.16Ω, TO-252 J377.pdf Relay Drive, DC/DC Converter and Motor Drive Applications- 4 V gate drive- Low drain-source ON-resistance : RDS (ON) = 0.16 Ω (typ.)- High forward transfer admittance : |Yfs| = 4.0 S (typ.)- Low leakage current : IDSS = −100 μA... View Details Compare
Fairchild | sku: 2118-1 FQPF7N60 ; Transistor N-MOSFET 600V 4.3A 48W 0.8Ω, TO-220F FQPF7N60.pdf View Details Compare
Wayon | sku: 4127-1 010N04L4 ; Transistor N-MOSFET 40V 268A 114W 0.75mΩ, PDFN-8 WMB010N04LG4.pdf View Details Compare
ONSEMI | sku: 4438 FQT7N10L ; Transistor N-MOSFET 100V 1.7A 2W 275mΩ, SOT-223 FQT7N10L.pdf View Details Compare
ST | sku: 4719-1 VNB35N07 ; Transistor N-MOSFET 70V 35A 125W 28mΩ-with-Protections-OMNIFET, TO-263 VNB35N07.pdf View Details Compare
sku: 2134-2 J2YRK_IRLML2030TR ; Transistor N-MOSFET 30V 2.7A 1.3W 80mΩ, SOT-23 IRLML2030TR.pdf View Details Compare
ST | sku: 1174-1 28N60M2 ; Transistor N-MOSFET 600V 22A 30W 0.135Ω-with-Protections, TO-220F 28N60M2.pdf View Details Compare
ST | sku: 4541 22NM60N ; Transistor N-MOSFET 600V 16A 30W 0.2Ω, TO-220F 22NM60N.pdf View Details Compare
IR | sku: 4087 FR9120 ; Transistor P-MOSFET 100V 5.6A 42W 0.6Ω, TO-252 FR9120.pdf View Details Compare
ST | sku: 1002-1 3N150 ; Transistor N-MOSFET 1500V 2.5A 63W 9Ω, TO-3PF 3N150.pdf View Details Compare
sku: 3752-1 IRL3705N ; Transistor N-MOSFET 55V 89A 170W 10mΩ-Logic, TO-220 IRL3705N.pdf View Details Compare
VBsemi | sku: 3016-1 RFU1205 ; Transistor N-MOSFET 55V 44A 107W 27mΩ, TO-251 RFU1205.pdf View Details Compare
sku: 4069-1 N3_1N03LT1 ; Transistor N-MOSFET 30V 2.1A 0.69W 80mΩ, SOT-23 N3 : 1N03LT1.pdf View Details Compare
Infineon | sku: 1194-1 11N60C3 ; Transistor N-MOSFET 650V 11A 33W 0.34Ω, TO-220F 11N60C3.pdf View Details Compare
VBsemi | sku: 4067 RFR1205 ; Transistor N-MOSFET 60V 45A 100W 25mΩ-Trench, TO-252 RFR1205.pdf View Details Compare
CRMICRO | sku: 1101-1 CRST041N08N ; Transistor N-MOSFET 85V 172A 208W 3.2mΩ, TO-220 CRST041N08N.pdf View Details Compare
CRMICRO | sku: 1142-1 CRST025N08N ; Transistor N-MOSFET 85V 240A 227W 1.8mΩ, TO-220 CRST025N08N.pdf View Details Compare