MCC | sku: 2556 MCU20P10 ; Transistor P-MOSFET 100V 20A 70W 85mΩ Trench-with-Protections, TO-252 Compare
xxx | sku: 2531-1 N3_N3DDA_Si2303CDS-T1-GE3 ; Transistor P-MOSFET 30V 2.7A 2.3W 158mΩ Trend, SOT-23 Compare
ALPHA_OMEGA | sku: 3874 36P06 ; Transistor P-MOSFET 60V 36A 56W 24mΩ with-Protections, TO-252 Compare
xxx | sku: 4461 J530 : 2SJ530 ; Transistor P-MOSFET 60V 15A 30W 80mΩ with-Protections, TO-252 Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ Trench Protections, SO-8 Compare
xxx | sku: 2683 B20P03 : EMB20P03V ; Transistor P-MOSFET Logic Level 30V 18A 2.5W 17.5mΩ, SO-8 Compare
IR | sku: 4087 FR9120 ; Transistor P-MOSFET 100V 5.6A 42W 0.6Ω, TO-252 FR9120.pdf View Details Compare
sku: 1401-1 J598 ; Transistor P-MOSFET 60V 12A 23W 102mΩ with-Protections, TO-252 2SJ598.pdf View Details Compare
xxx | sku: 1060 40P30 ; Transistor P-MOSFET 40V 30A 59W 25mΩ Logic-Level, TO-252 40P30.pdf View Details Compare
Vishay | sku: 2563-1 FF_IRFL9110TR ; Transistor P-MOSFET 100V 1.1A 3.1W 1.2Ω, SOT-223 FF_IRFL9110TR.pdf View Details Compare
NCEPOWER | sku: 2549-1 NCE60P82AK ; Transistor P-MOSFET 60V 82A 150W 11mΩ Trench, TO- 252 NCE60P82AK.pdf View Details Compare
MCC | sku: 2556 MCU20P10 ; Transistor P-MOSFET 100V 20A 70W 85mΩ Trench-with-Protections, TO-252 MCU20P10.pdf View Details Compare
xxx | sku: 2531-1 N3_N3DDA_Si2303CDS-T1-GE3 ; Transistor P-MOSFET 30V 2.7A 2.3W 158mΩ Trend, SOT-23 Si2303CDS.pdf View Details Compare
ST | sku: 2476 B80PF55 ; Transistor P-MOSFET 55V 80A 300W 16mΩ, TO-263 B80PF55.pdf View Details Compare
ON | sku: 2465 20P06HLG ; Transistor P-MOSFET 60V 20A 72W 143mΩ Logic-Level, TO-252 MTD20P06HDLT4G.pdf View Details Compare
Hitachi | sku: 2422-1 J550 ; Transistor P-MOSFET 60V 15A 50W 75mΩ with-Protections, TO-263 2SJ550.pdf View Details Compare
NCEPOWER | sku: 3931 NCE40P70K ; Transistor P-MOSFET 40V 70A 130W 7.5mΩ Trench, TO-252 NCE40P70K.pdf View Details Compare
ALPHA_OMEGA | sku: 3874 36P06 ; Transistor P-MOSFET 60V 36A 56W 24mΩ with-Protections, TO-252 NP36P06SLG.pdf View Details Compare
ALPHA_OMEGA | sku: 3859 D409 : AOD409 ; Transistor P-MOSFET 60V 26A 60W 32mΩ Trench, TO-252 AOD409.pdf View Details Compare
xxx | sku: 4710 DD0959 : PDD0959 ; Transistor P-MOSFET 100V 30A 102W 36mΩ Trench, TO-252 PDD0959.pdf View Details Compare
xxx | sku: 4698 RD3H045 ; Transistor P-MOSFET 45V 4.5A 15W 110mΩ with-Protections, TO-252 RD3H045.pdf View Details Compare
xxx | sku: 4469 7P1002 ; Transistor P-MOSFET 100V 15A 30W 85mΩ with-Protections, TO-252 7P1002.pdf View Details Compare
xxx | sku: 4461 J530 : 2SJ530 ; Transistor P-MOSFET 60V 15A 30W 80mΩ with-Protections, TO-252 2SJ530.pdf View Details Compare
xxx | sku: 4297 B1H_AO3401 ; Transistor P-MOSFET 30V 4.2A 1.4W 52mΩ, SOT-23 B1H_AO3401.pdf View Details Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ Trench Protections, SO-8 4447A : AO4447A.pdf The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. View Details Compare
ALPHA_OMEGA | sku: 4258 4485 ; Transistor P-MOSFET 40V 10A 3.1W 12.5mΩ Trench, SO-8 4485 : AO4485.pdf The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. View Details Compare
xxx | sku: 3730 A1SHB ; Transistor P-MOSFET 20V 2.2A 0.6W 110mΩ, SOT-23 A1SHB.pdf View Details Compare
xxx | sku: 2683 B20P03 : EMB20P03V ; Transistor P-MOSFET Logic Level 30V 18A 2.5W 17.5mΩ, SO-8 B20P03.pdf P‐Channel Logic Level Enhancement Mode Field Effect Transistor View Details Compare
xxx | sku: 1351-2 BSP171 ; Transistor P-MOSFET 60V 1.7A 1.8W 0.22Ω, SOT-223 BSP171.pdf • P channel• Enhancement mode• Logic Level• Avalanche rated• VGS(th) = -0.8...-2.0 V View Details Compare
Fairchild | sku: 1443 FDS9933A ; Transistor Dual P-MOSFET 20V 3.8A 2W 58mΩ Trench, SO-8 FDS9933A.pdf • -3.8 A, -20 V. RDS(on) = 0.075 Ω @ VGS = -4.5 V RDS(on) = 0.105 Ω @ VGS = -2.5 V.• Low gate charge ( 7nC typical ).• Fast switching speed.• High performance trench technology for extremely low RDS(on).• High... View Details Compare
IR | sku: 1023 FR9024N ; Transistor P-MOSFET 55V 11A 38W 175mΩ, TO-252 FR9024.pdf View Details Compare
Vishay | sku: 3729 Si4835DDY ; Transistor P-MOSFET 30V 13A 5.6W 14mΩ, SO-8 Si4835DDY.pdf View Details Compare
xxx | sku: 3825-1 Si9435BDY ; Transistor P-MOSFET 30V 4.1A 1.3W 33mΩ, SO-8 Si9435BDY.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
xxx | sku: 3458 Si4947A ; Dual Transistor P-MOSFET 30V 3A 1.2W 62mΩ, SO-8 Si4947.pdf Dual P-Channel 30-V (D-S) MOSFET View Details Compare
Vishay | sku: 1438 4825 : Si4825 ; Transistor P-MOSFET 30V 8.1A 1.5W 12mΩ, SO-8 Si4825.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
Vishay | sku: 1435 4435 : Si4435 ; Transistor P-MOSFET 30V 8A 2.5W 15mΩ, SO-8 Si4435.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
NEC | sku: 1929 J601 : 2SJ601 ; Transistor P-MOSFET 60V 36A 65W 25mΩ, TO-251 J601.pdf The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18... View Details Compare
Toshiba | sku: 1638 J412 : 2SJ412 ; Transistor P-MOSFET 100V 16A 60W 15mΩ, TO-263 J412.pdf TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) • 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage... View Details Compare
xxx | sku: 4074 IRFR9014P ; Transistor P-MOSFET 60V 5.1A 25W 0.5Ω, TO-252 IRFR9014P.pdf • Dynamic dV/dt rating• Repetitive avalanche rated• Surface mount (IRFR9014, SiHFR9014)• Straight lead (IRFU9014, SiHFU9014)• Available in tape and reel• P-channel• Fast switching View Details Compare
IR | sku: 1379 FU9024N ; Transistor P-MOSFET 55V 11A 38W 0.175Ω, TO-251 IPAK FU9024N.pdf - Ultra Low On-Resistance- P-Channel- Surface Mount (IRFR9024N)- Straight Lead (IRFU9024N)- Advanced Process Technology- Fast Switching- Fully Avalanche Rated View Details Compare
Fairchild | sku: 1434 FDS6675 ; Transistor P-MOSFET 30V 11A 2.5W 11mΩ Logic Trench, SO-8 FDS6675.pdf - Low gate charge (30nC typical).- High performance trench technology for extremely low RDS(ON).- High power and current handling capability View Details Compare
Vishay | sku: 1374 F9640S : IRF9640S ; Transistor P-MOSFET 200V 11A 125W 0.5Ω, TO-263 F9640S.pdf • Surface-mount• Available in tape and reel• Dynamic dV/dt rating• Repetitive avalanche rated• P-channel• Fast switching• Ease of paralleling View Details Compare
xxx | sku: 1171 APM4015P ; Transistor P-MOSFET 40V 45A 50W 13mΩ, TO-252 APM4015P.pdf · Power Management in LCD TV Inverter View Details Compare
ALPHA_OMEGA | sku: 1446 4407A ; Transistor P-MOSFET 30V 12A 3.1W 8.5mΩ Trench, SO-8 4407A : AO4407A.pdf The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. View Details Compare
xxx | sku: 3429 9565BGH : AP9565BGH ; Transistor P-MOSFET 40V 17A 25W 52mΩ, TO-252 9565BGH.pdf ▼ Lower Gate Charge▼ Simple Drive Requirement▼ Fast Switching Characteristic View Details Compare
xxx | sku: 3671 4953P : AF4953P ; Dual Transistor P-MOSFET 30V 5.2A 2.1W 40mΩ, SO-8 4953P.pdf - Low rDS(on) Provides Higher Efficiency and Extends Battery Life- Miniature SO-8 Surface Mount Package Saves Board Space- High power and current handling capability- Extended VGS range (±25) for battery pack applications View Details Compare
xxx | sku: 1460 J377_2SJ377 ; Transistor P-MOSFET 60V 5A 20W 0.16Ω, TO-252 J377.pdf Relay Drive, DC/DC Converter and Motor Drive Applications- 4 V gate drive- Low drain-source ON-resistance : RDS (ON) = 0.16 Ω (typ.)- High forward transfer admittance : |Yfs| = 4.0 S (typ.)- Low leakage current : IDSS = −100 μA (max)... View Details Compare