Toshiba | sku: 1637(5055) J380 ; Transistor P-MOSFET 100V 12A 35W 0.15Ω-with-Protections, TO-220F Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ-Trench-with-Protections, SO-8 Compare
ALPHA_OMEGA | sku: 4256 4425_AO4425 ; Transistor P-MOSFET 38V 14A 3.1W 7.7mΩ-with-Protections, SO-8 Compare
--- | sku: 1351-2 BSP171 ; Transistor P-MOSFET 60V 1.7A 1.8W 0.22Ω, SOT-223 BSP171.pdf • P channel• Enhancement mode• Logic Level• Avalanche rated• VGS(th) = -0.8...-2.0 V View Details Compare
IR | sku: 1023 FR9024N ; Transistor P-MOSFET 55V 11A 38W 175mΩ, TO-252 FR9024.pdf View Details Compare
ON | sku: 1320 MTP10P10 ; Transistor P-MOSFET 100V 10A 75W 300mΩ, TO-220 MTP10P10.pdf View Details Compare
IR | sku: 1292 IRFI9630G ; Transistor P-MOSFET 200V 4.3A 35W 0.8Ω, TO-220F IRFI9630G.pdf View Details Compare
Vishay | sku: 1272(5086) IRF9630 ; Transistor P-MOSFET 200V 6.5A 74W 0.8Ω, TO-220 IRF9630.pdf • Dynamic dV/dt Rating• Repetitive Avalanche Rated• P-Channel• Fast Switching• Ease of Paralleling• Simple Drive Requirements View Details Compare
--- | sku: 1171 APM4015P ; Transistor P-MOSFET 40V 45A 50W 13mΩ, TO-252 APM4015P.pdf · Power Management in LCD TV Inverter View Details Compare
SEC | sku: 1472 SFP9640 ; Transistor P-MOSFET 200V 11A 123W 0.5Ω, TO-220 SFP9640.pdf - Avalanche Rugged Technology- Rugged Gate Oxide Technology- Lower Input Capacitance- Improved Gate Charge- Extended Safe Operating Area- Lower Leakage Current : -10 mA (Max.) @ VDS = -200V- Low RDS(ON) : 0.344 W (Typ.) View Details Compare
Fairchild | sku: 1443 FDS9933A ; Dual-Transistor P-MOSFET 20V 3.8A 2W 58mΩ-Trench, SO-8 FDS9933A.pdf • -3.8 A, -20 V. RDS(on) = 0.075 Ω @ VGS = -4.5 V RDS(on) = 0.105 Ω @ VGS = -2.5 V.• Low gate charge ( 7nC typical ).• Fast switching speed.• High performance trench technology for extremely low RDS(on).• High... View Details Compare
--- | sku: 1367 IRFP9140N ; Transistor P-MOSFET 100V 23A 140W 117mΩ, TO-247 IRFP9140.pdf View Details Compare
Vishay | sku: 1438 4825_Si4825 ; Transistor P-MOSFET 30V 8.1A 1.5W 12mΩ, SO-8 Si4825.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
Vishay | sku: 1435 4435F_Si4435 ; Transistor P-MOSFET 30V 8A 2.5W 15mΩ, SO-8 Si4435.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
NEC | sku: 1455 J330_2SJ330 ; Transistor P-MOSFET 60V 20A 35W 40mΩ, TO-220F J330.pdf View Details Compare
--- | sku: 1635 J175_2SJ175 ; Transistor P-MOSFET 60V 10A 25W 0.13Ω, TO-220F J175.pdf Silicon P-Channel MOS FET • Low on-resistance• High speed switching• Low drive current• 4 V gate drive device , Can be driven from 5 V source• Suitable for motor drive, DC-DC converter, power switch and solenoid... View Details Compare
IXYS | sku: 1357 IXTP28P065T ; Transistor P-MOSFET 65V 28A 83W 45mΩ, TO-220 TP28P065T.pdf View Details Compare
IXYS | sku: 1355 IXTH20P50P ; Transistor P-MOSFET 500V 20A 460W 450mΩ, TO-247 IXTH20P50P.pdf ï¬ International Standard Packagesï¬ Avalanche Ratedï¬ Rugged PolarPTM Process ï¬ Low Package Inductanceï¬ Fast Intrinsic Diode View Details Compare
IR | sku: 1379 FU9024N ; Transistor P-MOSFET 55V 11A 38W 0.175Ω, TO-251 FU9024N.pdf - Ultra Low On-Resistance- P-Channel- Surface Mount (IRFR9024N)- Straight Lead (IRFU9024N)- Advanced Process Technology- Fast Switching- Fully Avalanche Rated View Details Compare
Fairchild | sku: 1370 FQP27P06 ; Transistor P-MOSFET 60V 27A 120W 55mΩ, TO-220 FQP27P06.pdf • - 27 A, - 60 V, RDS(on) = 70 mï— (Max.) @ VGS = - 10 V, ID = - 13.5 A• Low Gate Charge (Typ. 33 nC)• Low Crss (Typ. 120 pF)• 100% Avalanche Tested• 175ï‚°C Maximum Junction Temperature Rating View Details Compare
Fairchild | sku: 1434 FDS6675 ; Transistor P-MOSFET 30V 11A 2.5W 11mΩ-Logic-Trench, SO-8 FDS6675.pdf - Low gate charge (30nC typical).- High performance trench technology for extremely low RDS(ON).- High power and current handling capability View Details Compare
Vishay | sku: 1374 F9640S_IRF9640S ; Transistor P-MOSFET 200V 11A 125W 0.5Ω, TO-263 F9640S.pdf • Surface-mount• Available in tape and reel• Dynamic dV/dt rating• Repetitive avalanche rated• P-channel• Fast switching• Ease of paralleling View Details Compare
ALPHA_OMEGA | sku: 1446 4407A ; Transistor P-MOSFET 30V 12A 3.1W 8.5mΩ-Trench, SO-8 4407A : AO4407A.pdf The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. View Details Compare
Fairchild | sku: 1959 2N3820 ; Transistor P-JFET 20V 15mA 360mW Ω, TO-92 P-Channel General Purpose Amplifier 2N3820.pdf View Details Compare
NEC | sku: 1929 J601_2SJ601 ; Transistor P-MOSFET 60V 36A 65W 25mΩ, TO-251 J601.pdf The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18... View Details Compare
Toshiba | sku: 1638 J412_2SJ412 ; Transistor P-MOSFET 100V 16A 60W 15mΩ, TO-263 J412.pdf TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) • 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage... View Details Compare
Toshiba | sku: 1637(5055) J380 ; Transistor P-MOSFET 100V 12A 35W 0.15Ω-with-Protections, TO-220F 2SJ380.pdfRelay Drive, DC-DC Converter and Motor Drive Applications• 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)• High forward transfer admittance: |Yfs| = 7.7 S (typ.)• Low leakage current: IDSS =... View Details Compare
--- | sku: 1636 J307_2SJ307 ; Transistor P-MOSFET 250V 6A 30W 0.75Ω, TO-220F J307.pdf · Low ON resistance.· Ultrahigh-speed switching.· Low-voltage drive.· Micaless package facilitating mounting. View Details Compare
--- | sku: 3730 A1SHB ; Transistor P-MOSFET 20V 2.2A 0.6W 110mΩ, SOT-23 A1SHB.pdf View Details Compare
--- | sku: 2683 B20P03 ; Transistor P-MOSFET 30V 18A 2.5W 17.5mΩ-Logic-Level, SO-8 B20P03.pdf Pâ€Channel Logic Level Enhancement Mode Field Effect Transistor View Details Compare
Vishay | sku: 3729 Si4835DDY ; Transistor P-MOSFET 30V 13A 5.6W 14mΩ, SO-8 Si4835DDY.pdf View Details Compare
--- | sku: 3825-1 Si9435BDY ; Transistor P-MOSFET 30V 4.1A 1.3W 33mΩ, SO-8 Si9435BDY.pdf P-Channel 30-V (D-S) MOSFET View Details Compare
--- | sku: 3458 Si4947A ; Dual-Transistor P-MOSFET 30V 3A 1.2W 62mΩ, SO-8 Si4947.pdf Dual P-Channel 30-V (D-S) MOSFET View Details Compare
--- | sku: 3429 9565BGH_AP9565BGH ; Transistor P-MOSFET 40V 17A 25W 52mΩ, TO-252 9565BGH.pdf â–¼ Lower Gate Chargeâ–¼ Simple Drive Requirementâ–¼ Fast Switching Characteristic View Details Compare
Vishay | sku: 4294 IRF9Z34 ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-220 IRF9Z34.pdf View Details Compare
Vishay | sku: 4293 IRF9Z34S ; Transistor P-MOSFET 60V 18A 88W 140mΩ, TO-263 IRF9Z34S.pdf View Details Compare
Vishay | sku: 4292 IRF9Z24 ; Transistor P-MOSFET 60V 11A 60W 0.28Ω, TO-220 IRF9Z24.pdf View Details Compare
ALPHA_OMEGA | sku: 4289 D413A_AOD413A ; Transistor P-MOSFET 40V 12A 50W 36mΩ-Trench, TO-252 D413A.pdf View Details Compare
ALPHA_OMEGA | sku: 4259 4447A ; Transistor P-MOSFET 30V 17A 3.1W 5.5mΩ-Trench-with-Protections, SO-8 4447A : AO4447A.pdf The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. View Details Compare
ALPHA_OMEGA | sku: 4258 4485 ; Transistor P-MOSFET 40V 10A 3.1W 12.5mΩ-Trench, SO-8 4485 : AO4485.pdf The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. View Details Compare
ALPHA_OMEGA | sku: 4256 4425_AO4425 ; Transistor P-MOSFET 38V 14A 3.1W 7.7mΩ-with-Protections, SO-8 4425_AO4425.pdf View Details Compare
Hitachi | sku: 1639 J471_2SJ471 ; Transistor P-MOSFET 30V 30A 30W 25mΩ, TO-220F J471.pdf Silicon P Channel DV–L MOS FET , High Speed Power Switching. • Low on-resistance RDS(on) = 25 mΩ typ.• 4V gate drive devices.• High speed switching View Details Compare
--- | sku: 4074 IRFR9014P ; Transistor P-MOSFET 60V 5.1A 25W 0.5Ω, TO-252 IRFR9014P.pdf • Dynamic dV/dt rating• Repetitive avalanche rated• Surface mount (IRFR9014, SiHFR9014)• Straight lead (IRFU9014, SiHFU9014)• Available in tape and reel• P-channel• Fast switching View Details Compare
--- | sku: 1283 IRFP9240 ; Transistor P-MOSFET 200V 12A 150W 0.5Ω, TO-247 IRFP9240.pdf View Details Compare
IR | sku: 1290 IRF9640 ; Transistor P-MOSFET 200V 11A 125W 0.5Ω, TO-220 IRF9640.pdf IRF9640.pdf View Details Compare
Fairchild | sku: 1270 IRF9610 ; Transistor P-MOSFET 200V 1.8A 20W 3Ω, TO-220 IRF9610.pdf View Details Compare
IR | sku: 1269 IRF9540N ; Transistor P-MOSFET 100V 23A 140W 117mΩ, TO-220 IRF9540.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1267 IRF9530N ; Transistor P-MOSFET 100V 14A 79W 0.20Ω, TO-220 IRF9530N.pdf - Advanced Process Technology- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1265 IRF5210 ; Transistor P-MOSFET 100V 40A 200W 60mΩ, TO-220 IRF5210.pdf - Advanced Process Technology- Ultra Low On-Resistance- Dynamic dv/dt Rating- 175°C Operating Temperature- Fast Switching- P-Channel- Fully Avalanche Rated View Details Compare
IR | sku: 1266(5002-1) IRF4905 ; Transistor P-MOSFET 55V 74A 200W 20mΩ, TO-220 IRF4905.pdf View Details Compare
--- | sku: 1456 BS250 ; Transistor P-MOSFET 45V 0.18A 0.83W 8Ω, TO-92 BS250.pdf P-Channel 60-V (D-S) MOSFET View Details Compare
--- | sku: 3656 4AJ11 ; Quad-Transistor P-MOSFET 60V 8A 28W 90mΩ-Array-Driver, SP-12 4AJ11.pdf • Low on-resistance RDS(on) 0.13 , VGS = –10 V, ID = –4 A RDS(on) 0.17 , VGS = –4 V, I D = –4 A• Capable of 4 V gate drive• Low drive current• High speed switching• High... View Details Compare
--- | sku: 3671 4953P_AF4953P ; Dual-Transistor P-MOSFET 30V 5.2A 2.1W 40mΩ, SO-8 4953P.pdf - Low rDS(on) Provides Higher Efficiency and Extends Battery Life- Miniature SO-8 Surface Mount Package Saves Board Space- High power and current handling capability- Extended VGS range (±25) for battery pack applications View Details Compare