Overview Product Description FGL60N100BNTD.pdf Product Videos Custom Field Product Reviews Write a Review Write a Review × ONSEMI G60N100BNTD | Transistor IGBT Trench-with-Diode 1000V 42A/60A 180W, TO-264 Rating * Select Rating 1 star (worst) 2 stars 3 stars (average) 4 stars 5 stars (best) Name Email * Review Subject * Comments *
Quick view Details Fuji Electric | sku: IGBT104 1MBH60-100 | Transistor IGBT without-Diode 1000V 60A/60A 260W, TO-264
Quick view Details Toshiba | sku: IGBT12 GT60M303 | Transistor IGBT with-Diode 900V 60A/120A 170W, TO-264
Quick view Details --- | sku: IGBT13 CT60AM-18F | Transistor IGBT with-Diode 900V 40A/60A 180W, TO-3PL
Quick view Details NCEPOWER | sku: B4 NCE30TD60B | Transistor IGBT Trench-with-Diode 600V 30A/60A 190W, TO-220
Quick view Details NCEPOWER | sku: 1135 NCE60TD60BT | Transistor IGBT Trench-with-Diode 600V 60A/120A 316W, TO-247
