Overview Product Description GT50J301.pdf Product Videos Custom Field Product Reviews Write a Review Write a Review × Toshiba GT50J301 | Transistor IGBT with-Diode 600V 50A/50A 200W, TO-264 Rating * Select Rating 1 star (worst) 2 stars 3 stars (average) 4 stars 5 stars (best) Name Email * Review Subject * Comments *
Quick view Details Toshiba | sku: IGBT1 50JR22 | Transistor IGBT with-Diode 600V 44A/50A 230W, TO-3PN
Quick view Details SanKen | sku: IGBT125 MGD623S | Transistor IGBT Trench-with-Diode 600V 37A/50A 150W, TO-3P
Quick view Details Infineon | sku: 3299 K50T60 | Transistor IGBT Trench-with-Diode 600V 50A/80A 333W, TO-247
Quick view Details SanKen | sku: IGBT80 MGD633 | Transistor IGBT Trench-with-Diode 600V 37A/50A 150W, TO-247
Quick view Details Fuji Electric | sku: IGBT16 1MBH50D-060 | Transistor IGBT with-Diode 600V 50A/82A 310W, TO-3PL
