Overview Product Description HY3506.pdf Product Videos Custom Field Product Reviews Write a Review Write a Review × HUAYI HY3506 ; Transistor FET N-MOSFET 60V 190A 306W 3.5mΩ, TO-220 Rating * Select Rating 1 star (worst) 2 stars 3 stars (average) 4 stars 5 stars (best) Name Email * Review Subject * Comments *
Quick view Details Toshiba | sku: 2454 K2R9E10PL ; Transistor FET N-MOSFET 100V 240A 306W 2.4mΩ, TO-220
Quick view Details Infineon | sku: 1388-1 IRF100B201 ; Transistor FET N-MOSFET 100V 192A 441W 3.5mΩ, TO-220
Quick view Details Infineon | sku: 1257-1 IRF1404 ; Transistor FET N-MOSFET 40V 162A 200W 3.5mΩ, TO-220
Quick view Details IR | sku: 1257 F1404Z_IRF1404Z ; Transistor FET N-MOSFET 40V 202A 333W 3.5mΩ, TO-220
