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IGBT

Welcome to the IGBT (Insulated Gate Bipolar Transistor) department at Al-Hekmh Electronics. Combining the simple gate-drive characteristics of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor, our IGBTs are engineered for high-efficiency power conversion, motor control, inverters, and heavy-duty industrial applications.

Filter your search by browsing our specialized device types:

  • With Diode / Co-packaged: Explore standard with-Diode and advanced Trench-with-Diode options featuring an integrated ultra-fast recovery freewheeling diode to safeguard against inductive voltage spikes.
  • Without Diode: Standard without-Diode and Trench-without-Diode configurations tailored for bridge circuits where external, customized protection diodes are preferred.
  • Advanced Logic Control: High-efficiency Logic IGBTs designed to streamline your layouts by interfacing seamlessly with low-voltage control circuits and microcontrollers.

Available in robust through-hole (THT) and surface-mount (SMD) power packages designed to handle demanding current and thermal requirements.